Connectorized SMA, High Power, Linear Amplifier, 20 MHz to 500 MHz, 50Ω
THE BIG DEAL y High Power, 100 Watt y Excellent IP3, +60 dBm typ. y Excellent IP2, +84 dBm typ. y High efficiency, 50% typ. at Pin= +15dBm y Class A amplifier y No damage with an open or short output load under full CW output power1 y Shuts off when base plate temperature exceeds +100 °C y Over voltage protection, shut off above +37 V y Reverse Polarity Protected y Unconditionally stable y Protected by US patent 7,348,854 REV. E ECO-017544 ZHL-100W-GAN+ ED-14042/4 MCL NY 230420 PRODUCT OVERVIEW The Mini-Circuits ZHL-100W-GAN+ utilizes high power Galium Nitride (GaN) output stage, which results in higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts. GaN FET’s boast a maximum junction temperature of 250°C translating into higher operating temperatures without adversely affecting the MTBF. APPLICATIONS y VHF/UHF transmitters y Defense y Amateur radio, FM, TV y Laboratory use
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